Micron has revealed that it has developed 3D NAND flash with 232 layers, which will go into full-scale production later this year.
Described by Micron as “the world’s most advanced NAND”, the storage device is formed by linking two 3D NAND chips, resulting in a capacity of 128 GB (1 TB).
The company has yet to provide performance specs for its 232-layer device, but has hinted that speeds will exceed those of its current 3D NAND products, paving the way for new fast and large products. SSD.
232-Layer 3D NAND Flash
NAND flash is a type of non-volatile memory found in all types of storage devices, from Memory cards, USB flash drives and portable players to SSDs for devices and waiters.
The general idea behind the development of NAND flash is to reduce cost per capacity and increase storage density, effectively eliminating use cases for HDDs.
Regarding Micron’s specific plans for its new 232-layer 3D NAND device, Executive Vice President of Technology Scott DeBoer said the following:
“We’ve optimized the technology around what we need to create the world’s fastest managed NAND products, as well as SSD products for data centers and customers. »
“The combination of controllers, both internal and external, has been an important part of our goal of vertical product integration to ensure that we have optimized NAND and controller technology for what we need to deliver future products. leader.”
Micron says it is already working closely with industry partners to ensure its 232-layer device is properly supported, which should speed the development of new drives based on the technology.
SSDs powered by the new 3D NAND flash are expected to hit the market sometime in 2023.
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